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TPCF8303
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCF8303
Notebook PC Applications Portable Equipment Applications
* * * * Low drain-source ON resistance: RDS (ON) = 58 m (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement-model: Vth = -0.45 to -1.2 V (VDS = -10 V, ID = -200 A) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating -20 -20 8 -3.0 -12 1.35 1.12 W 0.53 0.33 0.58 -1.5 0.11 150 -55~150 mJ A mJ C C Unit V V V A
Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 4) Single-device operation (Note 3a)
JEDEC JEITA TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
8 7 6 5
1 Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
4
Marking (Note 6)
8 5
F5C
1 4
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TPCF8303
Thermal Characteristics
Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 92.6 C/W 111.6 235.8 C/W 378.8 Unit
Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
25.4
(b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = -16 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -1.5 A Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature. Note 6: Black round marking " " locates on the left lower side of parts number marking "F5C" indicates terminal No. 1.
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd |Yfs| Ciss Crss Coss tr VGS ton 0V -5 V 4.7 ID = -1.5 A VOUT RL = 6.7 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 8V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8 V VDS = -10 V, ID = -200 A VGS = -1.8 V, ID = -1.5 A VGS = -2.5 V, ID = -1.5 A VGS = -4.5 V, ID = -1.5 A VDS = -10 V, ID = -1.5 A Min -20 -10 -0.45 3.0 Typ. 120 63 43 6.0 860 110 140 5.6 16 16 55 11 0.9 2.7 Max 10 -10 -1.2 250 87 58 ns nC pF S m Unit A A V V
VDD -10 V - < 1%, tw = 10 s Duty = VDD -16 V, VGS = -5 V, - ID = -3 A
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -3.0 A, VGS = 0 V Min Typ. Max -12 1.2 Unit A V
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* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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